Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Voltage Collector Emitter Breakdown Max
- 1200V
- Configuration
- Single
- ECCN Kodu
- EAR99
- Kılıf / Paket
- Module
- Qualification Status
- Not Qualified
- Transistor Element Material
- SILICON
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- RoHS Durumu
- RoHS Compliant
- Power Max
- 3785W
- Parça Durumu
- Obsolete
- Max Collector Current
- 600A
- Max Power Dissipation
- 3.785kW
- Input
- Standard
- Vceon Max Vge Ic
- 2.6V @ 15V, 600A
- Yayın Yılı
- 2009
- Polaritychannel Type
- N-CHANNEL
- Seri
- IGBTMOD™
- Input Capacitance Cies Vce
- 100nF @ 10V
- Montaj
- Chassis Mount
- Montaj Tipi
- Chassis Mount
- Collector Emitter Voltage Vceo
- 2.6V
- Input Capacitance
- 100nF
- Pin Sayısı
- 9
- Terminal Formu
- UNSPECIFIED
- Pin Sayısı
- 11
- Jesd30 Code
- R-XUFM-X9
- Ntc Thermistor
- Yes
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Terminal Pozisyonu
- UPPER
- Terminal Sayısı
- 9
- Çalışma Sıcaklığı
- -40°C~150°C TJ
- Transistor Application
- POWER CONTROL
- Number Of Elements
- 1
- Current Collector Cutoff Max
- 1mA
- Case Connection
- ISOLATED
- Collectoremitter Breakdown Voltage
- 1.2kV
- REACH Uyumluluk Kodu
- unknown
- Kurşunsuz Kodu
- yes
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