Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Max Power Dissipation
- 4.1kW
- Reach Svhc
- Unknown
- Voltage Collector Emitter Breakdown Max
- 1200V
- Parça Durumu
- Obsolete
- Gateemitter Voltagemax
- 20V
- Input Capacitance Cies Vce
- 120nF @ 10V
- Polaritychannel Type
- N-CHANNEL
- RoHS Durumu
- Non-RoHS Compliant
- Ntc Thermistor
- No
- Montaj Tipi
- Chassis Mount
- Turn Off Timenom Toff
- 800 ns
- Seri
- IGBTMOD™
- Collectoremitter Breakdown Voltage
- 1.2kV
- Transistor Element Material
- SILICON
- Power Max
- 4100W
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Kılıf / Paket
- Module
- Input Capacitance
- 120nF
- Vceon Max Vge Ic
- 3.4V @ 15V, 600A
- Case Connection
- ISOLATED
- Yayın Yılı
- 1998
- Transistor Application
- MOTOR CONTROL
- Montaj
- Chassis Mount
- Terminal Sayısı
- 4
- Pin Sayısı
- 4
- Çalışma Sıcaklığı
- -40°C~150°C TJ
- Max Collector Current
- 600A
- Power Dissipation
- 2.4kW
- Terminal Pozisyonu
- UPPER
- Current Collector Cutoff Max
- 2mA
- Terminal Formu
- UNSPECIFIED
- Collector Emitter Voltage Vceo
- 3.4V
- Input
- Standard
- Configuration
- Single
- Number Of Elements
- 1
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