Volume pricing
- 1+ pcs$387.07
- 10+ pcs$365.16
- 100+ pcs$344.49
- 500+ pcs$324.99
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Terminal Formu
- UNSPECIFIED
- Collector Emitter Voltage Vceo
- 2.3V
- Configuration
- Half Bridge
- Number Of Elements
- 2
- Input
- Standard
- Transistor Application
- POWER CONTROL
- Terminal Sayısı
- 14
- Max Collector Current
- 600A
- Current Collector Cutoff Max
- 1mA
- Terminal Pozisyonu
- UPPER
- Pin Sayısı
- 14
- Pin Sayısı
- 14
- Çalışma Sıcaklığı
- -40°C~150°C TJ
- Seri
- IGBTMOD™
- Polaritychannel Type
- N-CHANNEL
- Ntc Thermistor
- Yes
- RoHS Durumu
- RoHS Compliant
- Input Capacitance
- 60nF
- Yayın Yılı
- 2011
- Case Connection
- ISOLATED
- Vceon Max Vge Ic
- 2.3V @ 15V, 600A
- Yüzey Montaj
- NO
- Collectoremitter Breakdown Voltage
- 1.2kV
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Power Max
- 4545W
- Transistor Element Material
- SILICON
- Kılıf / Paket
- Module
- Voltage Collector Emitter Breakdown Max
- 1200V
- Parça Durumu
- Discontinued
- Max Power Dissipation
- 4.545kW
- REACH Uyumluluk Kodu
- unknown
- Input Capacitance Cies Vce
- 60nF @ 10V
- ECCN Kodu
- EAR99
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