Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Kılıf / Paket
- Module
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Power Max
- 390W
- Transistor Element Material
- SILICON
- Collectoremitter Breakdown Voltage
- 1.2kV
- Vceon Max Vge Ic
- 3V @ 15V, 50A
- Case Connection
- ISOLATED
- Yayın Yılı
- 2010
- Input Capacitance
- 8.5nF
- Ntc Thermistor
- No
- RoHS Durumu
- RoHS Compliant
- Polaritychannel Type
- N-CHANNEL
- Seri
- IGBTMOD™
- Montaj Tipi
- Chassis Mount
- Input Capacitance Cies Vce
- 8.5nF @ 10V
- Max Power Dissipation
- 390W
- Parça Durumu
- Obsolete
- Voltage Collector Emitter Breakdown Max
- 1200V
- Input
- Standard
- Number Of Elements
- 6
- Configuration
- Three Phase Inverter
- Collector Emitter Voltage Vceo
- 3V
- Terminal Formu
- UNSPECIFIED
- Çalışma Sıcaklığı
- -40°C~150°C TJ
- Pin Sayısı
- 20
- Pin Sayısı
- 20
- Current Collector Cutoff Max
- 1mA
- Terminal Pozisyonu
- UPPER
- Max Collector Current
- 50A
- Terminal Sayısı
- 20
- Kurşunsuz Kodu
- yes
- Montaj
- Chassis Mount
- Transistor Application
- POWER CONTROL
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