Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Max Power Dissipation
- 735W
- Parça Durumu
- Obsolete
- ECCN Kodu
- EAR99
- Input Capacitance Cies Vce
- 132nF @ 10V
- Polaritychannel Type
- N-CHANNEL
- Ntc Thermistor
- No
- RoHS Durumu
- Non-RoHS Compliant
- Turn Off Timenom Toff
- 1400 ns
- Montaj Tipi
- Chassis Mount
- Seri
- IGBTMOD™
- Collectoremitter Breakdown Voltage
- 250V
- Igbt Type
- Trench
- Kılıf / Paket
- Module
- Transistor Element Material
- SILICON
- Power Max
- 735W
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Yayın Yılı
- 2000
- Case Connection
- ISOLATED
- Vceon Max Vge Ic
- 1.7V @ 10V, 450A
- Input Capacitance
- 132nF
- Montaj
- Chassis Mount
- Transistor Application
- POWER CONTROL
- Turn On Time
- 1200 ns
- Terminal Sayısı
- 4
- Kurşunsuz Kodu
- no
- Vcesatmax
- 2.8 V
- Pin Sayısı
- 4
- Çalışma Sıcaklığı
- -40°C~150°C TJ
- Max Collector Current
- 450A
- Terminal Pozisyonu
- UPPER
- Current Collector Cutoff Max
- 1mA
- Terminal Formu
- UNSPECIFIED
- Collector Emitter Voltage Vceo
- 1.7V
- Input
- Standard
- Configuration
- Single
- Number Of Elements
- 1
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