Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Terminal Formu
- UNSPECIFIED
- Transistor Element Material
- SILICON
- Kılıf / Paket
- Module
- Input Capacitance Cies Vce
- 60nF @ 10V
- Configuration
- Single
- Collector Emitter Voltage Vceo
- 3.4V
- Polaritychannel Type
- N-CHANNEL
- Collectoremitter Breakdown Voltage
- 1.2kV
- Power Max
- 2100W
- Input Capacitance
- 60nF
- Current Collector Cutoff Max
- 1mA
- Pin Sayısı
- 4
- Terminal Sayısı
- 4
- Vceon Max Vge Ic
- 3.4V @ 15V, 300A
- Transistor Application
- MOTOR CONTROL
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Case Connection
- ISOLATED
- Pin Sayısı
- 7
- Yayın Yılı
- 2010
- Power Dissipation
- 2.1kW
- Number Of Elements
- 1
- Ntc Thermistor
- No
- Terminal Pozisyonu
- UPPER
- Parça Durumu
- Obsolete
- RoHS Durumu
- Non-RoHS Compliant
- Montaj Tipi
- Chassis Mount
- Gateemitter Voltagemax
- 20V
- Input
- Standard
- Voltage Collector Emitter Breakdown Max
- 1200V
- Montaj
- Chassis Mount
- Max Power Dissipation
- 2.1kW
- Çalışma Sıcaklığı
- -40°C~150°C TJ
- Max Collector Current
- 300A
- Seri
- IGBTMOD™
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