Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Kılıf / Paket
- Module
- Input Capacitance Cies Vce
- 60nF @ 10V
- Terminal Formu
- UNSPECIFIED
- Transistor Element Material
- SILICON
- Power Max
- 2100W
- Turn Off Timenom Toff
- 700 ns
- Configuration
- Half Bridge
- Polaritychannel Type
- N-CHANNEL
- Collectoremitter Breakdown Voltage
- 1.2kV
- Collector Emitter Voltage Vceo
- 3.2V
- Element Configuration
- Dual
- Vceon Max Vge Ic
- 3.2V @ 15V, 300A
- Terminal Sayısı
- 7
- Pin Sayısı
- 7
- Input Capacitance
- 60nF
- Current Collector Cutoff Max
- 1mA
- Yayın Yılı
- 2001
- Power Dissipation
- 2.1kW
- Case Connection
- ISOLATED
- Transistor Application
- MOTOR CONTROL
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- RoHS Durumu
- Non-RoHS Compliant
- Parça Durumu
- Obsolete
- Number Of Elements
- 2
- Ntc Thermistor
- No
- Terminal Pozisyonu
- UPPER
- Montaj Tipi
- Chassis Mount
- Gateemitter Voltagemax
- 20V
- Input
- Standard
- Max Power Dissipation
- 2.1kW
- Montaj
- Chassis Mount, Screw
- Voltage Collector Emitter Breakdown Max
- 1200V
- Seri
- IGBTMOD™
- Max Collector Current
- 300A
- Çalışma Sıcaklığı
- -40°C~150°C TJ
Related Products
In Stock
Littelfuse
05401200
IGBTs Modules
In Stock
Littelfuse
05401500
IGBTs Modules
In Stock
Littelfuse
05407500
IGBTs Modules
In Stock
Littelfuse
05407900
IGBTs Modules
In Stock
Infineon
12MS08017F63G22903
IGBTs Modules
In Stock
Infineon Technologies
1MS08017E32W31490NOSA1
IGBTs Modules
Vishay
20MT120UFAPBF
IGBTs Modules
Infineon Technologies
2ED300C17SROHSBPSA1
IGBTs Modules