Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Transistor Element Material
- SILICON
- Terminal Formu
- UNSPECIFIED
- Kılıf / Paket
- Module
- Input Capacitance Cies Vce
- 30nF @ 10V
- Polaritychannel Type
- N-CHANNEL
- Collectoremitter Breakdown Voltage
- 600V
- Collector Emitter Voltage Vceo
- 2.8V
- Configuration
- Half Bridge
- Power Max
- 1100W
- Akım Değeri
- 300A
- Current Collector Cutoff Max
- 1mA
- Input Capacitance
- 30nF
- Pin Sayısı
- 7
- Terminal Sayısı
- 7
- Vceon Max Vge Ic
- 2.8V @ 15V, 300A
- Element Configuration
- Dual
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Transistor Application
- MOTOR CONTROL
- Case Connection
- ISOLATED
- Power Dissipation
- 890W
- Yayın Yılı
- 1998
- Terminal Pozisyonu
- UPPER
- Ntc Thermistor
- No
- Number Of Elements
- 2
- Parça Durumu
- Obsolete
- RoHS Durumu
- Non-RoHS Compliant
- Input
- Standard
- Montaj Tipi
- Chassis Mount
- Gateemitter Voltagemax
- 20V
- Voltage Rated Dc
- 600V
- Montaj
- Chassis Mount, Screw
- Max Power Dissipation
- 1.1kW
- Çalışma Sıcaklığı
- -40°C~150°C TJ
- Max Collector Current
- 300A
- Seri
- IGBTMOD™
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