Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Transistor Element Material
- SILICON
- Current Collector Cutoff Max
- 1mA
- Max Power Dissipation
- 1.1kW
- Terminal Pozisyonu
- UPPER
- Polaritychannel Type
- N-CHANNEL
- Montaj Tipi
- Chassis Mount
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Collectoremitter Breakdown Voltage
- 1.7kV
- Çalışma Sıcaklığı
- -40°C~150°C TJ
- Terminal Formu
- UNSPECIFIED
- Input
- Standard
- Power Max
- 1100W
- Voltage Collector Emitter Breakdown Max
- 1700V
- Input Capacitance
- 29nF
- Collector Emitter Voltage Vceo
- 4V
- Ntc Thermistor
- No
- Kılıf / Paket
- Module
- Gateemitter Voltagemax
- 20V
- Vceon Max Vge Ic
- 4V @ 15V, 200A
- Terminal Sayısı
- 7
- Vcesatmax
- 4 V
- Montaj
- Chassis Mount
- Pin Sayısı
- 7
- Configuration
- Half Bridge
- Case Connection
- ISOLATED
- Transistor Application
- MOTOR CONTROL
- Yayın Yılı
- 2001
- RoHS Durumu
- RoHS Compliant
- Parça Durumu
- Active
- Max Collector Current
- 200A
- Seri
- IGBTMOD™
- Number Of Elements
- 2
- Input Capacitance Cies Vce
- 29nF @ 10V
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