Volume pricing
- 1+ pcs$198.87
- 10+ pcs$187.61
- 100+ pcs$176.99
- 500+ pcs$166.97
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Voltage Collector Emitter Breakdown Max
- 1200V
- Montaj
- Chassis Mount
- Vceon Max Vge Ic
- 2.15V @ 15V, 150A
- RoHS
- Details
- Current Collector Cutoff Max
- 1mA
- Kılıf / Paket
- Module
- Ürün Tipi
- IGBT Modules
- Montaj Tipi
- Chassis Mount
- Terminal Sayısı
- 35
- Pin Sayısı
- 35
- Max Collector Current
- 150A
- Terminal Formu
- UNSPECIFIED
- RoHS Durumu
- RoHS Compliant
- Input Capacitance Cies Vce
- 15nF @ 10V
- Transistor Element Material
- SILICON
- Vcesatmax
- 2.25 V
- Ntc Thermistor
- Yes
- Fabrika Paket Adedi
- 10
- Input Capacitance
- 15nF
- Polaritychannel Type
- N-CHANNEL
- Parça Durumu
- Discontinued
- Seri
- IGBTMOD™
- Power Max
- 1150W
- Gateemitter Voltagemax
- 20V
- Configuration
- Three Phase Inverter
- Collectoremitter Saturation Voltage
- 1.2kV
- Çalışma Sıcaklığı
- -40°C~150°C TJ
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- ECCN Kodu
- EAR99
- Yayın Yılı
- 2010
- Number Of Elements
- 6
- Collector Emitter Voltage Vceo
- 2.15V
- Input
- Standard
- Reach Svhc
- Unknown
- Max Power Dissipation
- 1.15kW
- Transistor Application
- POWER CONTROL
- Terminal Pozisyonu
- UPPER
- Pin Sayısı
- 35
- Collectoremitter Breakdown Voltage
- 1.2kV
- Case Connection
- ISOLATED
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