Volume pricing
- 1+ pcs$65.82
- 10+ pcs$62.09
- 100+ pcs$58.58
- 500+ pcs$55.26
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Max Power Dissipation
- 350W
- Igbt Type
- Trench
- Transistor Element Material
- SILICON
- Terminal Pozisyonu
- UPPER
- Montaj
- Chassis Mount
- Current Collector Cutoff Max
- 1mA
- Çalışma Sıcaklığı
- -40°C~150°C TJ
- Kurşunsuz Kodu
- yes
- RoHS Durumu
- RoHS Compliant
- Ntc Thermistor
- No
- Collector Emitter Voltage Vceo
- 2.7V
- Polaritychannel Type
- N-CHANNEL
- Pin Sayısı
- 7
- Number Of Elements
- 2
- Vceon Max Vge Ic
- 2.7V @ 15V, 100A
- Kılıf / Paket
- Module
- Power Max
- 350W
- Seri
- IGBTMOD™
- Input Capacitance Cies Vce
- 27nF @ 10V
- Configuration
- Half Bridge
- Montaj Tipi
- Chassis Mount
- Terminal Sayısı
- 7
- Parça Durumu
- Discontinued
- Collectoremitter Breakdown Voltage
- 600V
- Pin Sayısı
- 7
- Input
- Standard
- Terminal Formu
- UNSPECIFIED
- Max Collector Current
- 100A
- Yayın Yılı
- 2003
- Transistor Application
- POWER CONTROL
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Case Connection
- ISOLATED
- Input Capacitance
- 27nF
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