Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- RoHS Durumu
- Non-RoHS Compliant
- Polaritychannel Type
- N-CHANNEL
- Collector Emitter Voltage Vceo
- 2.8V
- Ntc Thermistor
- No
- Kurşunsuz Kodu
- no
- Çalışma Sıcaklığı
- -40°C~150°C TJ
- Current Collector Cutoff Max
- 1mA
- Voltage Collector Emitter Breakdown Max
- 1700V
- Pin Sayısı
- 15
- Max Power Dissipation
- 3.9kW
- Voltage Rated Dc
- 1.7kV
- Terminal Pozisyonu
- UPPER
- Transistor Element Material
- SILICON
- Montaj
- Chassis Mount
- Akım Değeri
- 1kA
- Currentcollector Ic Max
- 1000A
- Yayın Yılı
- 2003
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Transistor Application
- POWER CONTROL
- Turn On Time
- 750 ns
- Max Collector Current
- 1kA
- Input Capacitance
- 220nF
- Gateemitter Voltagemax
- 20V
- Case Connection
- ISOLATED
- Jesd30 Code
- R-XUFM-X7
- Number Of Elements
- 2
- Vceon Max Vge Ic
- 2.8V @ 15V, 1000A
- Reach Svhc
- Unknown
- Turn Off Timenom Toff
- 1100 ns
- Kılıf / Paket
- Module
- Terminal Formu
- UNSPECIFIED
- Input
- Standard
- Pin Sayısı
- 7
- Collectoremitter Breakdown Voltage
- 1.7kV
- Seri
- IGBTMOD™
- Input Capacitance Cies Vce
- 220nF @ 10V
- Power Max
- 3900W
- Terminal Sayısı
- 7
- Parça Durumu
- Obsolete
- Montaj Tipi
- Chassis Mount
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