CM1200E4C-34N

Specifications

Transistor Element Material

SILICON

Turnoff Timenom Toff

1500 ns

Ihs Manufacturer

MITSUBISHI ELECTRIC CORP

Gateemitter Leakage Current

0.5 uA

Tip

Single

Number Of Terminals

7

Fabrika Paket Adedi

1

Part Life Cycle Code

Active

Package Description

FLANGE MOUNT, R-XUFM-X7

Jesd30 Code

R-XUFM-X7

Minimum Operating Temperature

- 40 C

Collector Emitter Voltage Vceo Max

1700 V

Collectoremitter Voltagemax

1700 V

Yüzey Montaj

NO

REACH Uyumluluk Kodu

unknown

Package Style

FLANGE MOUNT

Turnon Timenom Ton

1400 ns

Operating Temperaturemax

150 °C

Terminal Formu

UNSPECIFIED

Risk Rank

5.25

Montaj Stili

SMD/SMT

Pin Sayısı

7

Vcesatmax

2.8 V

Polaritychannel Type

N-CHANNEL

Height Mm

38 mm

Maks. Çalışma Sıcaklığı

+ 125 C

Qualification Status

Not Qualified

Seri

CM1200

Pd Power Dissipation

6500 W

Maximum Gate Emitter Voltage

20 V

Continuous Collector Current At25 C

1200 A

RoHS

No

Power Dissipationmax Abs

6500 W

Kılıf / Paket

Module

Ambalaj

Bulk

Number Of Elements

1

Transistor Application

POWER CONTROL

Package Body Material

UNSPECIFIED

Terminal Pozisyonu

UPPER

Collector Currentmax Ic

1200 A