PJ6676

Specifications

Jesd30 Code

R-PDSO-G8

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Package Body Material

PLASTIC/EPOXY

Transistor Application

SWITCHING

ECCN Kodu

EAR99

Transistor Element Material

SILICON

Operating Temperaturemax

150 °C

Power Dissipationmax Abs

2.5 W

Ihs Manufacturer

PAN JIT INTERNATIONAL INC

Terminal Pozisyonu

DUAL

REACH Uyumluluk Kodu

compliant

HTS Kodu

8541.29.00.95

Configuration

SINGLE WITH BUILT-IN DIODE

Turnon Timemax Ton

38 ns

Number Of Elements

1

Terminal Formu

GULL WING

Part Life Cycle Code

Active

Avalanche Energy Rating Eas

400 mJ

Package Shape

RECTANGULAR

Pulsed Drain Currentmax Idm

50 A

Number Of Terminals

8

Package Description

SMALL OUTLINE, R-PDSO-G8

Yüzey Montaj

YES

Polaritychannel Type

N-CHANNEL

Package Style

SMALL OUTLINE

Operating Mode

ENHANCEMENT MODE

Additional Feature

ULTRA LOW RESISTANCE

Power Dissipation Ambientmax

2.5 W

Operating Temperaturemin

-55 °C

Ds Breakdown Voltagemin

25 V

Feedback Capmax Crss

500 pF

Drain Currentmax Id

15 A

Turnoff Timemax Toff

132 ns

Drainsource On Resistancemax

0.008 Ω