2N7002KTB-R1-00001

Specifications

Transistor Polarity

N-Channel

Ürün Tipi

MOSFET

Channel Mode

Enhancement

Drainsource On Resistancemax

3 Ω

Vgsth Max Id

2.5V @ 250µA

Package Shape

RECTANGULAR

Transistor Type

1 N-Channel

Maks. Çalışma Sıcaklığı

+ 150 C

ECCN Kodu

EAR99

Typical Turnoff Delay Time

125 ns

Input Capacitance Ciss Max Vds

35 pF @ 25 V

Transistor Element Material

SILICON

Ürün Durumu

Active

Seri

NFET-035TB

Vgs Gatesource Voltage

- 20 V, + 20 V

Transistor Application

SWITCHING

Current Continuous Drain Id25

115mA (Ta)

Configuration

Single

Fet Type

N-Channel

Package Description

SMALL OUTLINE, R-PDSO-F3

Terminal Formu

FLAT

Package Style

SMALL OUTLINE

Typical Turnon Delay Time

20 ns

Ds Breakdown Voltagemin

60 V

Operating Mode

ENHANCEMENT MODE

Kılıf / Paket

SOT-523-3

Birim Ağırlık

0.000071 oz

Qg Gate Charge

800 pC

Rohs Code

Yes

Technology

Si

Reflow Temperaturemax S

NOT SPECIFIED

Risk Rank

5.55

Feedback Capmax Crss

5 pF

Paket

Tape & Reel (TR);Cut Tape (CT);Digi-Reel®;

Drive Voltage Max Rds On Min Rds On

4.5V, 10V

Vgs Th Gatesource Threshold Voltage

2.5 V

Rds On Max Id Vgs

3Ohm @ 500mA, 10V

Vds Drainsource Breakdown Voltage

60 V

Çalışma Sıcaklığı

-55°C ~ 150°C (TJ)

Vgs Max

±20V