PJX8839_R1_00001

Specifications

Vgs Gatesource Voltage

- 20 V, + 20 V

Kılıf / Paket

SOT-563-6

Input Capacitance Ciss Max Vds

51pF @ 25V

Gate Charge Qg Max Vgs

1.1nC @ 4.5V

Pd Power Dissipation

300 mW

Transistor Type

1 P-Channel

RoHS

Details

Transistor Polarity

P-Channel

Maks. Çalışma Sıcaklığı

+ 150 C

Fabrika Paket Adedi

4000

Qg Gate Charge

1.1 nC

Rds On Max Id Vgs

4Ohm @ 500mA, 10V

Ambalaj

MouseReel

Ürün Durumu

Active

Typical Turnon Delay Time

4.8 ns

Fet Type

2 P-Channel (Dual)

Current Continuous Drain Id25

200mA (Ta)

Birim Ağırlık

0.000212 oz

Rds On Drainsource Resistance

13 Ohms

Typical Turnoff Delay Time

52 ns

Seri

NFET-60TEMP

Paket

Tape & Reel (TR);Cut Tape (CT);Digi-Reel®;

Çalışma Sıcaklığı

-55°C ~ 150°C (TJ)

Montaj Stili

SMD/SMT

Vds Drainsource Breakdown Voltage

60 V

Minimum Operating Temperature

- 55 C

Channel Mode

Enhancement

Rise Time

19 ns

Number Of Channels

2 Channel

Ürün Tipi

MOSFET

Power Max

300mW (Ta)

Id Continuous Drain Current

200 mA

Configuration

Dual

Fet Feature

Standard

Montaj Tipi

Surface Mount

Vgsth Max Id

2.5V @ 250µA

Drain To Source Voltage Vdss

60V

Vgs Th Gatesource Threshold Voltage

2.5 V

Tedarikçi Cihaz Paketi

SOT-563

Technology

Si