PJT7808_R1_00001

Specifications

Number Of Channels

1 Channel

Channel Mode

Enhancement

Rise Time

20 ns

Minimum Operating Temperature

- 55 C

Montaj Stili

SMD/SMT

Vds Drainsource Breakdown Voltage

20 V

Tedarikçi Cihaz Paketi

SOT-363

Fet Feature

Logic Level Gate, 1.2V Drive

Montaj Tipi

Surface Mount

Vgsth Max Id

900mV @ 250µA

Drain To Source Voltage Vdss

20V

Vgs Th Gatesource Threshold Voltage

900 mV

Id Continuous Drain Current

500 mA

Ürün Tipi

MOSFET

Power Max

350mW (Ta)

Technology

Si

Input Capacitance Ciss Max Vds

67pF @ 10V

Kılıf / Paket

SOT-363-6

Vgs Gatesource Voltage

- 10 V, + 10 V

RoHS

Details

Transistor Polarity

N-Channel

Transistor Type

1 N-Channel

Pd Power Dissipation

350 mW

Gate Charge Qg Max Vgs

1.4nC @ 4.5V

Ambalaj

MouseReel

Ürün Durumu

Active

Fabrika Paket Adedi

3000

Qg Gate Charge

1.4 nC

Rds On Max Id Vgs

400mOhm @ 500mA, 4.5V

Maks. Çalışma Sıcaklığı

+ 150 C

Seri

NFET-20TSMN

Paket

Tape & Reel (TR);Cut Tape (CT);Digi-Reel®;

Typical Turnoff Delay Time

23 ns

Çalışma Sıcaklığı

-55°C ~ 150°C (TJ)

Current Continuous Drain Id25

500mA (Ta)

Birim Ağırlık

0.000265 oz

Rds On Drainsource Resistance

400 mOhms

Fet Type

2 N-Channel (Dual)

Typical Turnon Delay Time

2.8 ns