PJT7802_R1_00001

Specifications

Ürün Tipi

MOSFET

Power Max

350mW (Ta)

Id Continuous Drain Current

500 mA

Fet Feature

Standard

Montaj Tipi

Surface Mount

Vgs Th Gatesource Threshold Voltage

1 V

Drain To Source Voltage Vdss

20V

Vgsth Max Id

1V @ 250µA

Configuration

Dual

Tedarikçi Cihaz Paketi

SOT-363

Technology

Si

Vds Drainsource Breakdown Voltage

20 V

Montaj Stili

SMD/SMT

Minimum Operating Temperature

- 55 C

Rise Time

22 ns

Channel Mode

Enhancement

Number Of Channels

2 Channel

Maks. Çalışma Sıcaklığı

+ 150 C

Rds On Max Id Vgs

400mOhm @ 500mA, 4.5V

Qg Gate Charge

900 pC

Fabrika Paket Adedi

3000

Ürün Durumu

Not For New Designs

Ambalaj

Reel

Typical Turnon Delay Time

3 ns

Fet Type

2 N-Channel (Dual)

Rds On Drainsource Resistance

700 mOhms

Birim Ağırlık

0.000265 oz

Current Continuous Drain Id25

500mA (Ta)

Çalışma Sıcaklığı

-55°C ~ 150°C (TJ)

Typical Turnoff Delay Time

7 ns

Paket

Tape & Reel (TR);Cut Tape (CT);Digi-Reel®;

Seri

NFET-20TSMN

Vgs Gatesource Voltage

- 12 V, + 12 V

Kılıf / Paket

SOT-363-6

Input Capacitance Ciss Max Vds

39pF @ 10V

Gate Charge Qg Max Vgs

0.9nC @ 4.5V

Transistor Type

2 N-Channel

Pd Power Dissipation

350 mW

Transistor Polarity

N-Channel

RoHS

Details