PJQ2888_R1_00001

Specifications

Pd Power Dissipation

1.25 W

RoHS

Details

Transistor Polarity

P-Channel

Gate Charge Qg Max Vgs

2.2nC @ 4.5V

Kılıf / Paket

8-WFDFN Exposed Pad

Vgs Gatesource Voltage

- 8 V, + 8 V

Input Capacitance Ciss Max Vds

150pF @ 10V

Birim Ağırlık

0.000321 oz

Current Continuous Drain Id25

1.5A (Ta)

Rds On Drainsource Resistance

325 mOhms

Seri

NFET-20FOMP

Paket

Tape & Reel (TR);Cut Tape (CT);Digi-Reel®;

Çalışma Sıcaklığı

-55°C ~ 150°C (TJ)

Fet Type

2 P-Channel (Dual)

Qg Gate Charge

2.2 nC

Fabrika Paket Adedi

3000

Rds On Max Id Vgs

325mOhm @ 1.5A, 4.5V

Ambalaj

Reel

Ürün Durumu

Discontinued at Digi-Key

Maks. Çalışma Sıcaklığı

+ 150 C

Channel Mode

Enhancement

Number Of Channels

2 Channel

Montaj Stili

SMD/SMT

Vds Drainsource Breakdown Voltage

20 V

Minimum Operating Temperature

- 55 C

Technology

Si

Fet Feature

Standard

Montaj Tipi

Surface Mount

Vgsth Max Id

1V @ 250µA

Drain To Source Voltage Vdss

20V

Vgs Th Gatesource Threshold Voltage

1 V

Tedarikçi Cihaz Paketi

DFN2020-8

Ürün Tipi

MOSFET

Power Max

1.25W (Ta)

Id Continuous Drain Current

1.5 A