MBR1690CT_T0_00001

Specifications

Montaj Tipi

Through Hole

Technology

Si

Diode Type

Schottky

Direnç

392 Ω

Ürün Durumu

Active

Diode Configuration

1 Pair Common Cathode

Temperature Coefficient

50 ppm/°C

Kılıf / Paket

TO-220-3

Tedarikçi Cihaz Paketi

TO-220AB

Operating Temperature Junction

-65°C ~ 175°C

Paket

Tube

Current Average Rectified Io Per Diode

16A

Maks. Çalışma Sıcaklığı

155 °C

Voltage Forward Vf Max If

800 mV @ 8 A

Min. Çalışma Sıcaklığı

-55 °C

Voltage Rating

150 V

Yükseklik

650 µm

Voltage Dc Reverse Vr Max

90 V

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Composition

Thin Film

Current Reverse Leakage Vr

50 µA @ 90 V

Tolerans

0.5 %

Power Rating

250 mW