Request a quote for pricing
Priced by quantity and lead time.
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Vce Saturation Max Ib Ic
- 250mV @ 300μA, 10mA
- RoHS Durumu
- RoHS Compliant
- Max Power Dissipation
- 300mW
- REACH Uyumluluk Kodu
- unknown
- Resistor Emitter Base R2
- 10k Ω
- Montaj
- Surface Mount
- Max Breakdown Voltage
- 50V
- Collector Emitter Voltage Vceo
- 250mV
- Resistor Base R1
- 10k Ω
- Voltage Rated Dc
- 50V
- Ambalaj
- Tape & Reel (TR)
- Number Of Elements
- 2
- Dc Current Gain Hfe Min Ic Vce
- 35 @ 5mA 10V
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Parça Durumu
- Obsolete
- Yayın Yılı
- 2004
- Transistor Element Material
- SILICON
- Frequency Transition
- 150MHz 80MHz
- Current Collector Cutoff Max
- 500nA
- Montaj Tipi
- Surface Mount
- Kurşunsuz
- Lead Free
- Kurşunsuz Kodu
- yes
- Kılıf / Paket
- SOT-23-6
- Collectoremitter Breakdown Voltage
- 50V
- Polaritychannel Type
- NPN/PNP
- Transistor Type
- 1 NPN, 1 PNP - Pre-Biased (Dual)
- Max Collector Current
- 100mA
- Akım Değeri
- 100mA
Related Products
Panjit
2SC164S_R1_00001
BJT Transistors Arrays
Diodes Incorporated
ACX114EUQ-13R
BJT Transistors Arrays
Diodes Incorporated
ACX114EUQ-7R
BJT Transistors Arrays
Diodes Incorporated
ACX114YUQ-13R
BJT Transistors Arrays
Diodes Incorporated
ACX114YUQ-7R
BJT Transistors Arrays
Diodes Incorporated
ACX115EUQ-13R
BJT Transistors Arrays
Diodes Incorporated
ACX115EUQ-7R
BJT Transistors Arrays
Diodes Incorporated
ACX124EUQ-13R
BJT Transistors Arrays