SC8673040L

Specifications

Input Capacitance Ciss Max Vds

1092pF @ 10V

Kılıf / Paket

8-PowerSMD, Flat Leads

Power Max

1.7W 2.5W

Gate Charge Qg Max Vgs

6.3nC @ 4.5V

Fet Type

2 N-Channel (Dual) Asymmetrical

Gate To Source Voltage Vgs

3V

Çalışma Sıcaklığı

150°C TJ

Yükseklik

950μm

Operating Mode

DEPLETION MODE

Nem Hassasiyeti (MSL)

1 (Unlimited)

Montaj Tipi

Surface Mount

Continuous Drain Current Id

46A

Drain Currentmax Abs Id

10A

Transistor Element Material

SILICON

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Max Power Dissipation

40W

Drain To Source Voltage Vdss

30V

Drainsource On Resistancemax

0.014Ohm

Rds On Max Id Vgs

10m Ω @ 8A, 10V

Genişlik

5.9mm

Jesd30 Code

R-PDSO-F6

Ambalaj

Cut Tape (CT)

Current Continuous Drain Id25

16A 46A

Turn Off Delay Time

75 ns

Number Of Elements

2

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

REACH Uyumluluk Kodu

unknown

Element Configuration

Dual

RoHS Durumu

RoHS Compliant

Fet Feature

Logic Level Gate

Ds Breakdown Voltagemin

30V

Parça Durumu

Active

Fall Time Typ

11 ns

Rise Time

14ns

Case Connection

DRAIN

Uzunluk

4.9mm

Transistor Application

SWITCHING

Fabrika Tedarik Süresi

12 Weeks

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

ECCN Kodu

EAR99