Volume pricing
- 1+ pcs$0.57
- 10+ pcs$0.54
- 100+ pcs$0.51
- 500+ pcs$0.48
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Vgsth Max Id
- 1.3V @ 1mA
- Turn Off Delay Time
- 4 μs
- Fet Type
- 2 N-Channel (Dual)
- Drain Currentmax Abs Id
- 7A
- Number Of Elements
- 2
- Pin Sayısı
- 8
- Max Power Dissipation
- 1W
- Input Capacitance Ciss Max Vds
- 1450pF @ 10V
- Kılıf / Paket
- 8-SMD, Flat Lead
- Terminal Sayısı
- 8
- Operating Mode
- ENHANCEMENT MODE
- Turn On Delay Time
- 330 ns
- Montaj
- Surface Mount
- Montaj Tipi
- Surface Mount
- Ambalaj
- Tape & Reel (TR)
- Transistor Application
- SWITCHING
- Rds On Max Id Vgs
- 21m Ω @ 2A, 4.5V
- Yükseklik
- 830μm
- Gate To Source Voltage Vgs
- 12V
- Drainsource On Resistancemax
- 0.033Ohm
- Parça Durumu
- Active
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Fet Feature
- Standard
- Transistor Element Material
- SILICON
- Configuration
- COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR
- Reach Svhc
- No SVHC
- REACH Uyumluluk Kodu
- unknown
- ECCN Kodu
- EAR99
- RoHS Durumu
- RoHS Compliant
- Drain To Source Breakdown Voltage
- 40V
- Power Dissipation
- 1W
- Fabrika Tedarik Süresi
- 10 Weeks
- Fall Time Typ
- 33 ns
- Rise Time
- 9ns
- Drain To Source Voltage Vdss
- 20V
- Nominal Vgs
- 850 mV
- Genişlik
- 2.4mm
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
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