DB2S31100L

Specifications

Voltage Forward Vf Max If

560mV @ 200mA

Element Configuration

Single

Min. Çalışma Sıcaklığı

-55°C

Yükseklik

600μm

Reverse Recovery Time

2.2 ns

Diode Element Material

SILICON

Montaj Tipi

Surface Mount

Max Repetitive Reverse Voltage Vrrm

30V

Capacitance Vr F

6pF @ 10V 1MHz

Forward Current

200mA

Peak Reverse Current

5μA

Uzunluk

1.2mm

Parça Durumu

Discontinued

Current Reverse Leakage Vr

5μA @ 30V

Forward Voltage

560mV

Fabrika Tedarik Süresi

10 Weeks

ECCN Kodu

EAR99

Genişlik

800μm

Frequency Band

VERY HIGH FREQUENCY

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

HTS Kodu

8541.10.00.60

Max Forward Surge Current Ifsm

1A

Temel Parça No

DB2S311

Diode Type

Schottky

Contact Plating

Tin

Operating Temperature Junction

125°C Max

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Pin Sayısı

2

Montaj

Surface Mount

Average Rectified Current

200mA

Speed

Small Signal =< 200mA (Io), Any Speed

Maks. Çalışma Sıcaklığı

125°C

Yayın Yılı

2010

Nem Hassasiyeti (MSL)

1 (Unlimited)

Number Of Elements

1

Ambalaj

Cut Tape (CT)

Terminal Pozisyonu

DUAL

Reach Svhc

Unknown

Terminal Formu

FLAT

Peak Nonrepetitive Surge Current

1A