LPT80A-Z

Specifications

Maximum Collectoremitter Voltage V

30

Mounting

Through Hole

Hts

8541.49.70.40

Package Length

4.57(Max)

Maximum Emittercollector Voltage V

7

Peak Wavelength Nm

850

Maximum Collector Current Ma

50

Lens Shape Type

Domed

Pin Sayısı

2

Eccn Us

EAR99

Phototransistor Type

Phototransistor

Maximum Light Current Ua

3200

Ppap

No

Fabrication Technology

NPN Transistor

Maximum Operating Temperature C

100

RoHS

Compliant

Material

Silicon

Maximum Rise Time Ns

10000

Maximum Fall Time Ns

10000

Package Width

2.54(Max)

Number Of Channels Per Chip

1

Maximum Power Dissipation Mw

100

Maximum Collectoremitter Saturation Voltage V

0.15

Parça Durumu

LTB

Automotive

No

Maximum Dark Current Na

3

Minimum Operating Temperature C

-40

Pcb Changed

2

Eu Rohs

Compliant

Viewing Orientation

Side View

Polarity

NPN

Half Intensity Angle Degrees

70

Tip

IR Chip

Package Height

5.84(Max)