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C3 ChipZentronix
SBC857BDW1T1G

ON Semiconductor

SBC857BDW1T1G

Arrays BJT Transistors

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Specifications

Parça Durumu
Active
Transistor Type
2 PNP (Dual)
Collector Emitter Voltage Vceo
650mV
Terminal Sayısı
6
Collector Base Voltage Vcbo
-50V
Çalışma Sıcaklığı
-55°C~150°C TJ
Vce Saturation Max Ib Ic
650mV @ 5mA, 100mA
Terminal Formu
GULL WING
Nem Hassasiyeti (MSL)
1 (Unlimited)
Collectoremitter Breakdown Voltage
45V
Polarity
PNP
Gain Bandwidth Product
100MHz
Lifecycle Status
ACTIVE (Last Updated: 2 days ago)
Max Power Dissipation
380mW
Radyasyon Dayanımı
No
Dc Current Gain Hfe Min Ic Vce
220 @ 2mA 5V
Yayın Yılı
2009
Fabrika Tedarik Süresi
8 Weeks
ECCN Kodu
EAR99
Kurşunsuz Kodu
yes
Ambalaj
Tape & Reel (TR)
RoHS Durumu
ROHS3 Compliant
Transistor Application
AMPLIFIER
Kurşunsuz
Lead Free
Yüzey Montaj
YES
Kılıf / Paket
6-TSSOP, SC-88, SOT-363
Element Configuration
Dual
Collectoremitter Saturation Voltage
-650mV
JESD-609 Kodu
e3
Current Collector Cutoff Max
15nA ICBO
Pin Sayısı
6
Max Collector Current
100mA
Transition Frequency
100MHz
Currentcollector Ic Max
100mA
Number Of Elements
2
Transistor Element Material
SILICON
Temel Parça No
BC857BD
Pin Sayısı
6
Terminal Kaplaması
Tin (Sn)
Seri
Automotive, AEC-Q101

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