RURD620CCS9A-SB82215P

Specifications

Drain To Source Voltage Vdss

108 V

Current Continuous Drain Id25

100A (Tj)

Current Reverse Leakage Vr

100 µA @ 200 V

Diode Type

Avalanche

Fet Type

N-Channel

Gate Charge Qg Max Vgs

111 nC @ 10 V

Voltage Forward Vf Max If

1 V @ 6 A

Tedarikçi Cihaz Paketi

I2PAK

Paket

Tube

Technology

MOSFET (Metal Oxide)

Rds On Max Id Vgs

8.5mOhm @ 25A, 10V

Çalışma Sıcaklığı

-55°C ~ 175°C (TJ)

Ürün Durumu

Obsolete

Power Dissipation Max

263W (Tc)

Diode Configuration

1 Pair Common Cathode

Operating Temperature Junction

-65°C ~ 175°C

Input Capacitance Ciss Max Vds

5512 pF @ 50 V

Kılıf / Paket

TO-262-3 Long Leads, I²Pak, TO-262AA

Vgs Max

±20V

Vgsth Max Id

4V @ 1mA

Montaj Tipi

Through Hole

Reverse Recovery Time Trr

30 ns

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Drive Voltage Max Rds On Min Rds On

10V

Temel Ürün No

PSMN8

Voltage Dc Reverse Vr Max

200 V

Current Average Rectified Io Per Diode

6A