RB751S40T5G

Specifications

Voltage Forward Vf Max If

370mV @ 1mA

Current Reverse Leakage Vr

500nA @ 30V

Max Reverse Voltage Dc

40V

Forward Voltage

280mV

Maks. Çalışma Sıcaklığı

150°C

Terminal Sayısı

2

Reverse Voltage Dc

30V

Max Power Dissipation

200mW

Number Of Elements

1

Montaj

Surface Mount

Lifecycle Status

ACTIVE (Last Updated: 4 days ago)

JESD-609 Kodu

e3

Diode Type

Schottky

Yayın Yılı

2007

Output Currentmax

0.03A

Kılıf / Paket

SC-79, SOD-523

Max Repetitive Reverse Voltage Vrrm

40V

Speed

Small Signal =< 200mA (Io), Any Speed

Kurşunsuz

Lead Free

Parça Durumu

Active

Terminal Formu

FLAT

Diode Element Material

SILICON

Fabrika Tedarik Süresi

22 Weeks

Current Average Rectified Io

30mA DC

Terminal Pozisyonu

DUAL

Operating Temperature Junction

-55°C~150°C

Nem Hassasiyeti (MSL)

1 (Unlimited)

Peak Reverse Current

300nA

Min. Çalışma Sıcaklığı

-55°C

Average Rectified Current

30mA

Ambalaj

Tape & Reel (TR)

Element Configuration

Single

RoHS Durumu

ROHS3 Compliant

Montaj Tipi

Surface Mount

Jesd30 Code

R-PDSO-F2

Kurşunsuz Kodu

yes

Max Forward Surge Current Ifsm

500mA

Forward Current

30mA

Terminal Kaplaması

Tin (Sn)