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C3 ChipZentronix
PN3563_D26Z

ON Semiconductor

PN3563_D26Z

RF BJT Transistors

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Specifications

Power Max
350mW
Yayın Yılı
2000
Montaj Tipi
Through Hole
Temel Parça No
2N3563
Ambalaj
Tape & Reel (TR)
Kılıf / Paket
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Currentcollector Ic Max
50mA
Transistor Type
NPN
Nem Hassasiyeti (MSL)
1 (Unlimited)
Parça Durumu
Obsolete
Gain
14dB ~ 26dB
Çalışma Sıcaklığı
-55°C~150°C TJ
Voltage Collector Emitter Breakdown Max
15V
Dc Current Gain Hfe Min Ic Vce
20 @ 8mA 10V
Tedarikçi Cihaz Paketi
TO-92-3
Frequency Transition
1.5GHz

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