NXH50C120L2C2ESG

Specifications

Channel Type

N

Maximum Gate Emitter Voltage

±20.0V

Current Collector Cutoff Max

250 µA

Input Capacitance Cies Vce

11.897 nF @ 20 V

Military

No

Hts

8541.29.00.95

Continuous Collector Current

50

Package Width

40.2

Maximum Collectoremitter Voltage V

1200

Ürün Durumu

Active

Tedarikçi Cihaz Paketi

26-DIP

Maximum Gate Emitter Leakage Current Ua

0.4

Power Max

20 mW

Minimum Operating Temperature C

-40

Collectoremitter Saturation Voltage

1.8

Temel Ürün No

NXH50

Montaj Tipi

Through Hole

Minimum Operating Temperature

- 40 C

Typical Collector Emitter Saturation Voltage V

1.8

Maximum Continuous Collector Current A

50

Maks. Çalışma Sıcaklığı

+ 150 C

Aec Qualified

No

Eccn Us

EAR99

Maximum Collector Emitter Voltage

650 V

Pin Sayısı

26

Fabrika Paket Adedi

6

Paket

Tube

Kılıf / Paket

26-PowerDIP Module (1.199, 47.20mm)

Maximum Gate Emitter Voltage V

±20

RoHS Durumu

RoHS Compliant

Supplier Package

DIP

Maximum Operating Temperature C

150

Çalışma Sıcaklığı

-40°C ~ 150°C (TJ)

Configuration

Hex

Package Type

DIP26

Mounting

Through Hole

Collector Emitter Voltage Vceo Max

1200 V

Ürün Tipi

IGBT Modules

Currentcollector Ic Max

50 A

Ntc Thermistor

Yes