NVMFD5C674NLWFT1G

Specifications

Jesd30 Code

R-PDSO-F6

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Fabrika Tedarik Süresi

48 Weeks

Operating Mode

ENHANCEMENT MODE

Lifecycle Status

ACTIVE (Last Updated: 4 days ago)

Yayın Yılı

2013

RoHS Durumu

ROHS3 Compliant

Avalanche Energy Rating Eas

61 mJ

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Ds Breakdown Voltagemin

60V

Drainsource On Resistancemax

0.0204Ohm

Gate Charge Qg Max Vgs

4.7nC @ 4.5V

Vgsth Max Id

2.2V @ 25μA

Kılıf / Paket

8-PowerTDFN

Current Continuous Drain Id25

11A Ta 42A Tc

Fet Type

2 N-Channel (Dual)

Transistor Element Material

SILICON

REACH Uyumluluk Kodu

not_compliant

Pulsed Drain Currentmax Idm

119A

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Yüzey Montaj

YES

Seri

Automotive, AEC-Q101

Fet Feature

Standard

Drain To Source Voltage Vdss

60V

Case Connection

DRAIN

Terminal Formu

FLAT

Power Max

3W Ta 37W Tc

Montaj Tipi

Surface Mount

Input Capacitance Ciss Max Vds

640pF @ 25V

Number Of Elements

2

Çalışma Sıcaklığı

-55°C~175°C TJ

Kurşunsuz Kodu

yes

Rds On Max Id Vgs

14.4m Ω @ 10A, 10V

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Ambalaj

Tape & Reel (TR)

Terminal Sayısı

6

Terminal Kaplaması

Tin (Sn)

JESD-609 Kodu

e3

Nem Hassasiyeti (MSL)

1 (Unlimited)

Parça Durumu

Active