NVMFD5C470NLWFT1G

Specifications

Lifecycle Status

ACTIVE (Last Updated: 4 days ago)

Operating Mode

ENHANCEMENT MODE

Tepe Reflow Süresi (maks. sn)

30

Fabrika Tedarik Süresi

48 Weeks

Jesd30 Code

R-PDSO-F6

Avalanche Energy Rating Eas

49 mJ

RoHS Durumu

ROHS3 Compliant

Yayın Yılı

2013

Vgsth Max Id

2.2V @ 20μA

Gate Charge Qg Max Vgs

4nC @ 4.5V

Drainsource On Resistancemax

0.0178Ohm

Ds Breakdown Voltagemin

40V

Tepe Reflow Sıcaklığı (°C)

260

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Pulsed Drain Currentmax Idm

110A

REACH Uyumluluk Kodu

not_compliant

Transistor Element Material

SILICON

Fet Type

2 N-Channel (Dual)

Current Continuous Drain Id25

11A Ta 36A Tc

Kılıf / Paket

8-PowerTDFN

Power Max

3W Ta 24W Tc

Terminal Formu

FLAT

Case Connection

DRAIN

Drain To Source Voltage Vdss

40V

Fet Feature

Standard

Yüzey Montaj

YES

Seri

Automotive, AEC-Q101

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Rds On Max Id Vgs

11.5m Ω @ 5A, 10V

Çalışma Sıcaklığı

-55°C~175°C TJ

Kurşunsuz Kodu

yes

Input Capacitance Ciss Max Vds

590pF @ 25V

Number Of Elements

2

Montaj Tipi

Surface Mount

Nem Hassasiyeti (MSL)

1 (Unlimited)

JESD-609 Kodu

e3

Terminal Sayısı

6

Terminal Kaplaması

Tin (Sn)

Ambalaj

Tape & Reel (TR)

Parça Durumu

Active