NVMFD5C462NLWFT1G

Specifications

Yayın Yılı

2013

RoHS Durumu

ROHS3 Compliant

Avalanche Energy Rating Eas

174 mJ

Lifecycle Status

ACTIVE (Last Updated: 3 days ago)

Jesd30 Code

R-PDSO-F6

Fabrika Tedarik Süresi

48 Weeks

Operating Mode

ENHANCEMENT MODE

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Power Dissipationmax Abs

50W

Kılıf / Paket

8-PowerTDFN

Current Continuous Drain Id25

18A Ta 84A Tc

Fet Type

2 N-Channel (Dual)

Transistor Element Material

SILICON

Pulsed Drain Currentmax Idm

311A

REACH Uyumluluk Kodu

not_compliant

Vgsth Max Id

2.2V @ 40μA

Ds Breakdown Voltagemin

40V

Drainsource On Resistancemax

0.0077Ohm

Gate Charge Qg Max Vgs

11nC @ 4.5V

Rds On Max Id Vgs

4.7m Ω @ 10A, 10V

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Montaj Tipi

Surface Mount

Input Capacitance Ciss Max Vds

1300pF @ 25V

Number Of Elements

2

Çalışma Sıcaklığı

-55°C~175°C TJ

Kurşunsuz Kodu

yes

Drain To Source Voltage Vdss

40V

Case Connection

DRAIN

Terminal Formu

FLAT

Power Max

3W Ta 50W Tc

Seri

Automotive, AEC-Q101

Yüzey Montaj

YES

Fet Feature

Standard

Parça Durumu

Active

JESD-609 Kodu

e3

Nem Hassasiyeti (MSL)

1 (Unlimited)

Ambalaj

Tape & Reel (TR)

Terminal Kaplaması

Tin (Sn)

Terminal Sayısı

6