Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Avalanche Energy Rating Eas
- 40 mJ
- Element Configuration
- Dual
- RoHS Durumu
- ROHS3 Compliant
- Yayın Yılı
- 2013
- ECCN Kodu
- EAR99
- Lifecycle Status
- ACTIVE, NOT REC (Last Updated: 4 days ago)
- Operating Mode
- ENHANCEMENT MODE
- Fabrika Tedarik Süresi
- 13 Weeks
- Contact Plating
- Tin
- Jesd30 Code
- R-PDSO-F6
- Transistor Element Material
- SILICON
- Pulsed Drain Currentmax Idm
- 74A
- Fet Type
- 2 N-Channel (Dual)
- Current Continuous Drain Id25
- 6A
- Kılıf / Paket
- 8-PowerTDFN
- Vgsth Max Id
- 3V @ 250μA
- Gate Charge Qg Max Vgs
- 20nC @ 10V
- Drainsource On Resistancemax
- 0.06Ohm
- Pin Sayısı
- 8
- Ds Breakdown Voltagemin
- 60V
- Pin Sayısı
- 8
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Drain Currentmax Abs Id
- 6A
- Rds On Max Id Vgs
- 39m Ω @ 7.5A, 10V
- Continuous Drain Current Id
- 17A
- Kurşunsuz Kodu
- yes
- Çalışma Sıcaklığı
- -55°C~175°C TJ
- Gate To Source Voltage Vgs
- 20V
- Number Of Elements
- 2
- Input Capacitance Ciss Max Vds
- 540pF @ 25V
- Montaj Tipi
- Surface Mount
- Power Dissipation
- 3.2W
- Terminal Formu
- FLAT
- Case Connection
- DRAIN
- Reference Standard
- AEC-Q101
- Drain To Source Voltage Vdss
- 60V
- Radyasyon Dayanımı
- No
- Fet Feature
- Logic Level Gate
- Yüzey Montaj
- YES
- Max Power Dissipation
- 3.2W
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