Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Drain To Source Breakdown Voltage
- 60V
- Vgsth Max Id
- 3V @ 250μA
- Pin Sayısı
- 8
- Element Configuration
- Dual
- Avalanche Energy Rating Eas
- 10.5 mJ
- Transistor Application
- SWITCHING
- Yayın Yılı
- 2006
- Reach Svhc
- No SVHC
- Lifecycle Status
- ACTIVE, NOT REC (Last Updated: 1 day ago)
- Operating Mode
- ENHANCEMENT MODE
- Fabrika Tedarik Süresi
- 13 Weeks
- Turn On Delay Time
- 8.1 ns
- Kurşunsuz
- Lead Free
- JESD-609 Kodu
- e3
- Ambalaj
- Tape & Reel (TR)
- Genişlik
- 5.1mm
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Continuous Drain Current Id
- 17A
- Rds On Max Id Vgs
- 39m Ω @ 7.5A, 10V
- Kurşunsuz Kodu
- yes
- Çalışma Sıcaklığı
- -55°C~175°C TJ
- Montaj Tipi
- Surface Mount
- Number Of Elements
- 2
- Terminal Formu
- FLAT
- Case Connection
- DRAIN
- Fet Feature
- Logic Level Gate
- Max Power Dissipation
- 3.2W
- Fet Type
- 2 N-Channel (Dual)
- Pulsed Drain Currentmax Idm
- 74A
- Transistor Element Material
- SILICON
- Kılıf / Paket
- 8-PowerTDFN
- Current Continuous Drain Id25
- 6A
- Gate Charge Qg Max Vgs
- 20nC @ 10V
- Yükseklik
- 1.05mm
- Pin Sayısı
- 8
- RoHS Durumu
- ROHS3 Compliant
- ECCN Kodu
- EAR99
- Turn Off Delay Time
- 14.5 ns
- Jesd30 Code
- R-PDSO-F6
- Parça Durumu
- Not For New Designs
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