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Priced by quantity and lead time.
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Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Continuous Drain Current Id
- 10A
- Rds On Max Id Vgs
- 13m Ω @ 15A, 10V
- Kurşunsuz Kodu
- yes
- Çalışma Sıcaklığı
- -55°C~175°C TJ
- Montaj Tipi
- Surface Mount
- Input Capacitance Ciss Max Vds
- 1560pF @ 25V
- Number Of Elements
- 2
- Gate To Source Voltage Vgs
- 20V
- Terminal Formu
- FLAT
- Power Dissipation
- 3.1W
- Reference Standard
- AEC-Q101
- Drain To Source Voltage Vdss
- 60V
- Case Connection
- DRAIN
- Fet Feature
- Logic Level Gate
- Radyasyon Dayanımı
- No
- Max Power Dissipation
- 3.1W
- Yüzey Montaj
- YES
- Parça Durumu
- Not For New Designs
- Halogen Free
- Halogen Free
- Kurşunsuz
- Lead Free
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- JESD-609 Kodu
- e3
- Terminal Sayısı
- 6
- Terminal Kaplaması
- Tin (Sn)
- Ambalaj
- Tape & Reel (TR)
- Avalanche Energy Rating Eas
- 40 mJ
- Element Configuration
- Dual
- Yayın Yılı
- 2013
- RoHS Durumu
- ROHS3 Compliant
- ECCN Kodu
- EAR99
- Lifecycle Status
- ACTIVE, NOT REC (Last Updated: 2 days ago)
- Operating Mode
- ENHANCEMENT MODE
- Jesd30 Code
- R-PDSO-F6
- Fabrika Tedarik Süresi
- 13 Weeks
- Drain To Source Breakdown Voltage
- 60V
- Fet Type
- 2 N-Channel (Dual)
- Transistor Element Material
- SILICON
- Pulsed Drain Currentmax Idm
- 190A
- Kılıf / Paket
- 8-PowerTDFN
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