NVMFD5853NLWFT1G

Specifications

Fet Type

2 N-Channel (Dual)

Pulsed Drain Currentmax Idm

165A

Transistor Element Material

SILICON

Kılıf / Paket

8-PowerTDFN

Vgsth Max Id

2.4V @ 250μA

Drainsource On Resistancemax

0.015Ohm

Pin Sayısı

8

Gate Charge Qg Max Vgs

23nC @ 10V

Pin Sayısı

8

Ds Breakdown Voltagemin

40V

Element Configuration

Dual

Avalanche Energy Rating Eas

40 mJ

Yayın Yılı

2014

RoHS Durumu

ROHS3 Compliant

ECCN Kodu

EAR99

Lifecycle Status

ACTIVE, NOT REC (Last Updated: 4 days ago)

Operating Mode

ENHANCEMENT MODE

Jesd30 Code

R-PDSO-F6

Fabrika Tedarik Süresi

13 Weeks

Parça Durumu

Not For New Designs

Halogen Free

Halogen Free

Kurşunsuz

Lead Free

Nem Hassasiyeti (MSL)

1 (Unlimited)

JESD-609 Kodu

e3

Terminal Kaplaması

Tin (Sn)

Terminal Sayısı

6

Ambalaj

Tape & Reel (TR)

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Drain Currentmax Abs Id

34A

Continuous Drain Current Id

12A

Rds On Max Id Vgs

10m Ω @ 15A, 10V

Çalışma Sıcaklığı

-55°C~175°C TJ

Kurşunsuz Kodu

yes

Montaj Tipi

Surface Mount

Input Capacitance Ciss Max Vds

1100pF @ 25V

Number Of Elements

2

Gate To Source Voltage Vgs

20V

Terminal Formu

FLAT

Drain To Source Voltage Vdss

40V

Reference Standard

AEC-Q101