NVMD6N03R2G

Specifications

ECCN Kodu

EAR99

Avalanche Energy Rating Eas

325 mJ

Temel Parça No

NTMD6N03

Transistor Application

SWITCHING

Yayın Yılı

2011

RoHS Durumu

RoHS Compliant

Montaj

Surface Mount

Operating Mode

ENHANCEMENT MODE

Jesd30 Code

R-PDSO-G8

Tepe Reflow Süresi (maks. sn)

30

Fet Type

2 N-Channel (Dual)

Pulsed Drain Currentmax Idm

30A

Transistor Element Material

SILICON

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Drainsource On Resistancemax

0.032Ohm

Gate Charge Qg Max Vgs

30nC @ 10V

Tepe Reflow Sıcaklığı (°C)

260

Ds Breakdown Voltagemin

30V

Vgsth Max Id

2.5V @ 250μA

Additional Feature

ULTRA LOW ON RESISTANCE

Çalışma Sıcaklığı

-55°C~150°C TJ

Montaj Tipi

Surface Mount

Input Capacitance Ciss Max Vds

950pF @ 24V

Number Of Elements

2

Gate To Source Voltage Vgs

20V

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Drain Currentmax Abs Id

6A

Continuous Drain Current Id

6A

Rds On Max Id Vgs

32m Ω @ 6A, 10V

Fet Feature

Logic Level Gate

Radyasyon Dayanımı

No

Max Power Dissipation

1.29W

Terminal Formu

GULL WING

Drain To Source Voltage Vdss

30V

Reference Standard

AEC-Q101

Parça Durumu

Obsolete

Terminal Kaplaması

Tin (Sn)

Terminal Sayısı

8

Ambalaj

Tape & Reel (TR)