Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Terminal Kaplaması
- Tin (Sn)
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- Qualification Status
- Not Qualified
- Vgsth Max Id
- 2.5V @ 250μA
- Montaj Tipi
- Surface Mount
- RoHS Durumu
- RoHS Compliant
- Turn Off Delay Time
- 63.7 ns
- Pin Sayısı
- 6
- Kurşunsuz Kodu
- yes
- Transistor Element Material
- SILICON
- Input Capacitance Ciss Max Vds
- 24.5pF @ 20V
- Ambalaj
- Tape & Reel (TR)
- Element Configuration
- Dual
- Fet Feature
- Logic Level Gate
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Rds On Max Id Vgs
- 1.6 Ω @ 500mA, 10V
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Transistor Application
- SWITCHING
- Terminal Formu
- FLAT
- Gate Charge Qg Max Vgs
- 0.7nC @ 4.5V
- Power Dissipation
- 250mW
- Rise Time
- 7.3ns
- Continuous Drain Current Id
- 294mA
- Gate To Source Voltage Vgs
- 20V
- Drain To Source Voltage Vdss
- 60V
- Kılıf / Paket
- SOT-563, SOT-666
- Operating Mode
- ENHANCEMENT MODE
- Kurşunsuz
- Lead Free
- Parça Durumu
- Obsolete
- Drain Currentmax Abs Id
- 0.294A
- Yayın Yılı
- 2007
- Drain To Source Breakdown Voltage
- 60V
- Yüzey Montaj
- YES
- Fall Time Typ
- 7.3 ns
- Lifecycle Status
- LAST SHIPMENTS (Last Updated: 1 week ago)
- JESD-609 Kodu
- e3
- Fet Type
- 2 N-Channel (Dual)
- ECCN Kodu
- EAR99
- Number Of Elements
- 2
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