NTZD3156CT1G

Specifications

Terminal Formu

FLAT

Rise Time

6.5ns

Power Dissipation

280mW

Gate Charge Qg Max Vgs

2.5nC @ 4.5V

Kılıf / Paket

SOT-563, SOT-666

Gate To Source Voltage Vgs

6V

Continuous Drain Current Id

540mA

Operating Mode

ENHANCEMENT MODE

Kurşunsuz

Lead Free

Parça Durumu

Obsolete

Drain Currentmax Abs Id

0.54A

Yayın Yılı

2007

Drain To Source Breakdown Voltage

20V

Drainsource On Resistancemax

0.55Ohm

Fall Time Typ

19.5 ns

Lifecycle Status

LAST SHIPMENTS (Last Updated: 5 days ago)

JESD-609 Kodu

e3

Fet Type

N and P-Channel

ECCN Kodu

EAR99

Polaritychannel Type

N-CHANNEL AND P-CHANNEL

Number Of Elements

2

Montaj

Surface Mount

Max Power Dissipation

250mW

Pin Sayısı

6

Terminal Sayısı

6

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Terminal Kaplaması

Tin (Sn)

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Vgsth Max Id

1V @ 250μA

Qualification Status

Not Qualified

Montaj Tipi

Surface Mount

RoHS Durumu

RoHS Compliant

Turn Off Delay Time

29 ns

Input Capacitance Ciss Max Vds

72pF @ 16V

Current Continuous Drain Id25

540mA 430mA

Transistor Element Material

SILICON

Pin Sayısı

6

Kurşunsuz Kodu

yes

Ambalaj

Tape & Reel (TR)