Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Terminal Sayısı
- 6
- Number Of Channels
- 2
- Polaritychannel Type
- N-CHANNEL AND P-CHANNEL
- Number Of Elements
- 2
- Max Power Dissipation
- 250mW
- Yüzey Montaj
- YES
- Drainsource On Resistancemax
- 0.55Ohm
- Yayın Yılı
- 2007
- ECCN Kodu
- EAR99
- Fet Type
- N and P-Channel
- JESD-609 Kodu
- e3
- Gate Charge Qg Max Vgs
- 2.5nC @ 4.5V
- Fabrika Tedarik Süresi
- 26 Weeks
- Terminal Formu
- FLAT
- Radyasyon Dayanımı
- No
- Parça Durumu
- Obsolete
- Drain Currentmax Abs Id
- 0.54A
- Operating Mode
- ENHANCEMENT MODE
- Continuous Drain Current Id
- 430mA
- Gate To Source Voltage Vgs
- 6V
- Drain To Source Voltage Vdss
- 20V
- Kılıf / Paket
- SOT-563, SOT-666
- Transistor Application
- SWITCHING
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Rds On Max Id Vgs
- 550m Ω @ 540mA, 4.5V
- Element Configuration
- Dual
- Ambalaj
- Tape & Reel (TR)
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Fet Feature
- Standard
- Weight
- 8.193012mg
- Transistor Element Material
- SILICON
- Pin Sayısı
- 6
- Current Continuous Drain Id25
- 540mA 430mA
- Input Capacitance Ciss Max Vds
- 150pF @ 16V
- Montaj Tipi
- Surface Mount
- RoHS Durumu
- RoHS Compliant
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Terminal Kaplaması
- Tin (Sn)
- Vgsth Max Id
- 1V @ 250μA
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