Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Gate Charge Qg Max Vgs
- 2.5nC @ 4.5V
- Power Dissipation
- 250mW
- Rise Time
- 12ns
- Terminal Formu
- FLAT
- Kurşunsuz
- Lead Free
- Parça Durumu
- Obsolete
- Drain Currentmax Abs Id
- 0.43A
- Continuous Drain Current Id
- 430mA
- Gate To Source Voltage Vgs
- 6V
- Drain To Source Voltage Vdss
- 20V
- Kılıf / Paket
- SOT-563, SOT-666
- Operating Mode
- ENHANCEMENT MODE
- Drainsource On Resistancemax
- 0.9Ohm
- Fall Time Typ
- 12 ns
- Akım Değeri
- -430mA
- Yayın Yılı
- 2006
- Drain To Source Breakdown Voltage
- -20V
- Fet Type
- 2 P-Channel (Dual)
- ECCN Kodu
- EAR99
- JESD-609 Kodu
- e3
- Number Of Elements
- 2
- Montaj
- Surface Mount
- Voltage Rated Dc
- -20V
- Max Power Dissipation
- 250mW
- Additional Feature
- ESD PROTECTION, LOW THRESHOLD
- Feedback Capmax Crss
- 20 pF
- Terminal Sayısı
- 6
- Pin Sayısı
- 6
- Temel Parça No
- NTZD3152P
- Tepe Reflow Sıcaklığı (°C)
- 260
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Tepe Reflow Süresi (maks. sn)
- 40
- Terminal Kaplaması
- Tin (Sn)
- Qualification Status
- Not Qualified
- Vgsth Max Id
- 1V @ 250μA
- Input Capacitance Ciss Max Vds
- 175pF @ 16V
- Transistor Element Material
- SILICON
- Pin Sayısı
- 6
- RoHS Durumu
- RoHS Compliant
- Turn Off Delay Time
- 35 ns
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