Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Vgsth Max Id
- 1V @ 250μA
- RoHS Durumu
- ROHS3 Compliant
- Uzunluk
- 1.05mm
- Reach Svhc
- No SVHC
- Kurşunsuz Kodu
- yes
- Current Continuous Drain Id25
- 220mA
- Ambalaj
- Tape & Reel (TR)
- Element Configuration
- Dual
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Fet Feature
- Logic Level Gate
- Rds On Max Id Vgs
- 1.5 Ω @ 100mA, 4.5V
- Transistor Application
- SWITCHING
- Turn On Delay Time
- 16.5 ns
- Terminal Formu
- FLAT
- Fabrika Tedarik Süresi
- 8 Weeks
- Radyasyon Dayanımı
- No
- Parça Durumu
- Active
- Kurşunsuz
- Lead Free
- Threshold Voltage
- 1V
- Yüzey Montaj
- YES
- JESD-609 Kodu
- e3
- Lifecycle Status
- ACTIVE (Last Updated: 5 days ago)
- ECCN Kodu
- EAR99
- Fet Type
- 2 N-Channel (Dual)
- Yükseklik
- 400μm
- Max Power Dissipation
- 125mW
- Terminal Sayısı
- 6
- Montaj Tipi
- Surface Mount
- Turn Off Delay Time
- 142 ns
- Transistor Element Material
- SILICON
- Pin Sayısı
- 6
- Input Capacitance Ciss Max Vds
- 12.5pF @ 15V
- Contact Plating
- Tin
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Genişlik
- 850μm
- Power Dissipation
- 200mW
- Rise Time
- 25.5ns
- Operating Mode
- ENHANCEMENT MODE
- Gate To Source Voltage Vgs
- 8V
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