Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Ambalaj
- Tape & Reel (TR)
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Transistor Application
- SWITCHING
- Montaj Tipi
- Surface Mount
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Gate To Source Voltage Vgs
- 8V
- Yayın Yılı
- 2006
- ECCN Kodu
- EAR99
- Transistor Element Material
- SILICON
- Operating Mode
- ENHANCEMENT MODE
- Akım Değeri
- -1.45A
- Input Capacitance Ciss Max Vds
- 265pF @ 16V
- Rds On Max Id Vgs
- 160m Ω @ 1.45A, 4.5V
- Terminal Sayısı
- 8
- Rise Time
- 30ns
- Additional Feature
- LOGIC LEVEL COMPATIBLE
- Fet Feature
- Logic Level Gate
- Fall Time Typ
- 30 ns
- Voltage Rated Dc
- -20V
- Terminal Kaplaması
- Tin/Lead (Sn/Pb)
- Turn Off Delay Time
- 30 ns
- Kurşunsuz
- Contains Lead
- Montaj
- Surface Mount
- Qualification Status
- Not Qualified
- Terminal Formu
- GULL WING
- JESD-609 Kodu
- e0
- Vgsth Max Id
- 1.4V @ 250μA
- Pin Sayısı
- 8
- Max Power Dissipation
- 500mW
- Number Of Elements
- 2
- Drain To Source Breakdown Voltage
- -20V
- Power Dissipation
- 500mW
- Tepe Reflow Süresi (maks. sn)
- 30
- Drain To Source Voltage Vdss
- 20V
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Continuous Drain Current Id
- 1.45A
- Fet Type
- 2 P-Channel (Dual)
- RoHS Durumu
- Non-RoHS Compliant
- Configuration
- SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
- Gate Charge Qg Max Vgs
- 10nC @ 4.5V
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