Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Additional Feature
- LOGIC LEVEL COMPATIBLE
- Terminal Sayısı
- 8
- Terminal Kaplaması
- Tin/Lead (Sn/Pb)
- Drainsource On Resistancemax
- 0.03Ohm
- Operating Mode
- ENHANCEMENT MODE
- Fet Type
- 2 N-Channel (Dual)
- Pin Sayısı
- 8
- Fet Feature
- Logic Level Gate
- Transistor Application
- SWITCHING
- Rise Time
- 25ns
- Montaj
- Surface Mount
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Ambalaj
- Tube
- Pin Sayısı
- 8
- Continuous Drain Current Id
- 6.2A
- Drain To Source Breakdown Voltage
- 20V
- Yayın Yılı
- 2006
- Configuration
- COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE
- Kurşunsuz
- Contains Lead
- ECCN Kodu
- EAR99
- JESD-609 Kodu
- e0
- Akım Değeri
- 7A
- Voltage Rated Dc
- 20V
- Qualification Status
- Not Qualified
- Rds On Max Id Vgs
- 22m Ω @ 7A, 4.5V
- Montaj Tipi
- Surface Mount
- Power Dissipation
- 1.81W
- Nem Hassasiyeti (MSL)
- 3 (168 Hours)
- Vgsth Max Id
- 1.2V @ 250μA
- Max Power Dissipation
- 1.39W
- Parça Durumu
- Obsolete
- Turn Off Delay Time
- 60 ns
- Number Of Elements
- 2
- Fall Time Typ
- 25 ns
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Input Capacitance Ciss Max Vds
- 630pF @ 16V
- Transistor Element Material
- SILICON
- Gate Charge Qg Max Vgs
- 17nC @ 4.5V
- RoHS Durumu
- Non-RoHS Compliant
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