Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- JESD-609 Kodu
- e0
- Configuration
- COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE
- ECCN Kodu
- EAR99
- Kurşunsuz
- Contains Lead
- Voltage Rated Dc
- 20V
- Akım Değeri
- 6.9A
- Rise Time
- 45ns
- Montaj
- Surface Mount
- Transistor Application
- SWITCHING
- Continuous Drain Current Id
- 4.7A
- Yayın Yılı
- 2006
- Drain To Source Breakdown Voltage
- 20V
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Pin Sayısı
- 8
- Ambalaj
- Tape & Reel (TR)
- Fet Type
- 2 N-Channel (Dual)
- Operating Mode
- ENHANCEMENT MODE
- Pin Sayısı
- 8
- Fet Feature
- Logic Level Gate
- Feedback Capmax Crss
- 175 pF
- Additional Feature
- LOGIC LEVEL COMPATIBLE, AVALANCHE RATED
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Drainsource On Resistancemax
- 0.032Ohm
- Terminal Sayısı
- 8
- Terminal Kaplaması
- Tin/Lead (Sn/Pb)
- Kılıf / Paket
- 8-TSSOP (0.173, 4.40mm Width)
- REACH Uyumluluk Kodu
- not_compliant
- Gate To Source Voltage Vgs
- 12V
- Terminal Formu
- GULL WING
- Gate Charge Qg Max Vgs
- 22nC @ 4.5V
- RoHS Durumu
- Non-RoHS Compliant
- Tepe Reflow Süresi (maks. sn)
- 30
- Number Of Elements
- 2
- Fall Time Typ
- 90 ns
- Vgsth Max Id
- 1.2V @ 250μA
- Max Power Dissipation
- 940mW
- Parça Durumu
- Obsolete
- Turn Off Delay Time
- 40 ns
- Input Capacitance Ciss Max Vds
- 1400pF @ 16V
- Transistor Element Material
- SILICON
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