NTND31225CZTAG

Specifications

Vgsth Max Id

1V @ 250μA

Yükseklik

440μm

Parça Durumu

Active

Fabrika Tedarik Süresi

5 Weeks

Number Of Elements

2

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Transistor Element Material

SILICON

Max Junction Temperature Tj

150°C

Input Capacitance Ciss Max Vds

12.3pF @ 15V 12.8pF @ 15V

Number Of Channels

2

Current Continuous Drain Id25

220mA Ta 127mA Ta

Jesd30 Code

R-PBCC-N6

Rds On Max Id Vgs

1.5 Ω @ 100mA, 4.5V, 5 Ω @ 100mA, 4.5V

Polaritychannel Type

N-CHANNEL AND P-CHANNEL

Montaj Tipi

Surface Mount

Power Dissipation

125mW

Nem Hassasiyeti (MSL)

1 (Unlimited)

Kurşunsuz Kodu

yes

Seri

Automotive, AEC-Q101

Power Max

125mW Ta

Kılıf / Paket

6-XFLGA

Gate To Source Voltage Vgs

8V

Terminal Formu

NO LEAD

Yüzey Montaj

YES

RoHS Durumu

ROHS3 Compliant

Drain To Source Voltage Vdss

20V

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Operating Mode

ENHANCEMENT MODE

Fet Type

N and P-Channel Complementary

Fet Feature

Standard

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Terminal Sayısı

6

Terminal Kaplaması

Nickel/Palladium/Gold (Ni/Pd/Au)

Terminal Pozisyonu

BOTTOM

JESD-609 Kodu

e4

Lifecycle Status

ACTIVE (Last Updated: 1 week ago)

Transistor Application

SWITCHING

Çalışma Sıcaklığı

-55°C~150°C TJ

Ambalaj

Tape & Reel (TR)

Yayın Yılı

2015