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Priced by quantity and lead time.
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Terminal Kaplaması
- Nickel/Palladium/Gold (Ni/Pd/Au)
- Terminal Sayısı
- 6
- Fet Type
- 2 N-Channel (Dual)
- Operating Mode
- ENHANCEMENT MODE
- Fet Feature
- Standard
- Montaj
- Surface Mount
- Transistor Application
- SWITCHING
- Continuous Drain Current Id
- 200mA
- Yayın Yılı
- 2015
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Pin Sayısı
- 6
- Ambalaj
- Tape & Reel (TR)
- JESD-609 Kodu
- e4
- Configuration
- SEPERATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR
- Terminal Pozisyonu
- BOTTOM
- Kurşunsuz
- Lead Free
- Lifecycle Status
- ACTIVE (Last Updated: 1 day ago)
- Montaj Tipi
- Surface Mount
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Rds On Max Id Vgs
- 1.5 Ω @ 100mA, 4.5V
- Number Of Elements
- 2
- Vgsth Max Id
- 1V @ 250μA
- Parça Durumu
- Active
- Fabrika Tedarik Süresi
- 5 Weeks
- Max Power Dissipation
- 125mW
- Transistor Element Material
- SILICON
- Input Capacitance Ciss Max Vds
- 12.3pF @ 15V
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Drain To Source Voltage Vdss
- 20V
- RoHS Durumu
- ROHS3 Compliant
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- Ds Breakdown Voltagemin
- 20V
- Kılıf / Paket
- 6-XFLGA
- Kurşunsuz Kodu
- yes
- Drain Currentmax Abs Id
- 0.2A
- Power Max
- 125mW
- Terminal Formu
- NO LEAD
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