Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Max Power Dissipation
- 1.16W
- Rds On Max Id Vgs
- 6.5m Ω @ 10A, 10V
- Gate Charge Qg Max Vgs
- 9.7nC @ 4.5V
- Contact Plating
- Tin
- Pin Sayısı
- 10
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Radyasyon Dayanımı
- No
- Current Continuous Drain Id25
- 10.3A 13.3A
- Operating Mode
- ENHANCEMENT MODE
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Fabrika Tedarik Süresi
- 7 Weeks
- Terminal Sayısı
- 8
- Ds Breakdown Voltagemin
- 30V
- Transistor Application
- SWITCHING
- Ambalaj
- Tape & Reel (TR)
- JESD-609 Kodu
- e3
- Case Connection
- DRAIN SOURCE
- Pulsed Drain Currentmax Idm
- 60A
- RoHS Durumu
- ROHS3 Compliant
- Terminal Formu
- FLAT
- Fet Feature
- Logic Level Gate
- Vgsth Max Id
- 2.2V @ 250μA
- Montaj
- Surface Mount
- Transistor Element Material
- SILICON
- Drain To Source Voltage Vdss
- 30V
- ECCN Kodu
- EAR99
- Configuration
- SERIES, 2 ELEMENTS WITH BUILT-IN DIODE
- Gate To Source Voltage Vgs
- 20V
- Drainsource On Resistancemax
- 0.01Ohm
- Fet Type
- 2 N-Channel (Dual), Schottky
- Number Of Elements
- 2
- Pin Sayısı
- 8
- Yayın Yılı
- 2012
- Drain Currentmax Abs Id
- 13.5A
- Parça Durumu
- Active
- Continuous Drain Current Id
- 13.3A
- Power Max
- 1.1W 1.16W
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Montaj Tipi
- Surface Mount
- Kurşunsuz
- Lead Free
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