NTMFD4902NFT3G

Specifications

Max Power Dissipation

1.16W

Rds On Max Id Vgs

6.5m Ω @ 10A, 10V

Gate Charge Qg Max Vgs

9.7nC @ 4.5V

Contact Plating

Tin

Pin Sayısı

10

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Radyasyon Dayanımı

No

Current Continuous Drain Id25

10.3A 13.3A

Operating Mode

ENHANCEMENT MODE

Çalışma Sıcaklığı

-55°C~150°C TJ

Fabrika Tedarik Süresi

7 Weeks

Terminal Sayısı

8

Ds Breakdown Voltagemin

30V

Transistor Application

SWITCHING

Ambalaj

Tape & Reel (TR)

JESD-609 Kodu

e3

Case Connection

DRAIN SOURCE

Pulsed Drain Currentmax Idm

60A

RoHS Durumu

ROHS3 Compliant

Terminal Formu

FLAT

Fet Feature

Logic Level Gate

Vgsth Max Id

2.2V @ 250μA

Montaj

Surface Mount

Transistor Element Material

SILICON

Drain To Source Voltage Vdss

30V

ECCN Kodu

EAR99

Configuration

SERIES, 2 ELEMENTS WITH BUILT-IN DIODE

Gate To Source Voltage Vgs

20V

Drainsource On Resistancemax

0.01Ohm

Fet Type

2 N-Channel (Dual), Schottky

Number Of Elements

2

Pin Sayısı

8

Yayın Yılı

2012

Drain Currentmax Abs Id

13.5A

Parça Durumu

Active

Continuous Drain Current Id

13.3A

Power Max

1.1W 1.16W

Nem Hassasiyeti (MSL)

1 (Unlimited)

Montaj Tipi

Surface Mount

Kurşunsuz

Lead Free