Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Current Continuous Drain Id25
- 10.3A 13.3A
- Radyasyon Dayanımı
- No
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Gate Charge Qg Max Vgs
- 9.7nC @ 4.5V
- Pin Sayısı
- 8
- Contact Plating
- Tin
- Max Power Dissipation
- 1.16W
- Rds On Max Id Vgs
- 6.5m Ω @ 10A, 10V
- Ds Breakdown Voltagemin
- 30V
- Terminal Sayısı
- 8
- Transistor Application
- SWITCHING
- Fabrika Tedarik Süresi
- 17 Weeks
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Operating Mode
- ENHANCEMENT MODE
- Element Configuration
- Dual
- Yüzey Montaj
- YES
- Case Connection
- DRAIN SOURCE
- JESD-609 Kodu
- e3
- Ambalaj
- Tape & Reel (TR)
- Drain To Source Voltage Vdss
- 30V
- Transistor Element Material
- SILICON
- Vgsth Max Id
- 2.2V @ 250μA
- Drainsource On Resistancemax
- 0.01Ohm
- Gate To Source Voltage Vgs
- 20V
- ECCN Kodu
- EAR99
- RoHS Durumu
- ROHS3 Compliant
- Pulsed Drain Currentmax Idm
- 60A
- Fet Feature
- Logic Level Gate
- Terminal Formu
- FLAT
- Fet Type
- 2 N-Channel (Dual), Schottky
- Number Of Elements
- 2
- Drain Currentmax Abs Id
- 13.5A
- Yayın Yılı
- 2012
- Pin Sayısı
- 8
- Lifecycle Status
- ACTIVE (Last Updated: 1 day ago)
- Power Max
- 1.1W 1.16W
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Parça Durumu
- Active
- Continuous Drain Current Id
- 13.3A
- Kurşunsuz Kodu
- yes
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